Enrichment behaviour of gallium in heat and surface treatments of Al–Ga foils

Abstract The behaviour of gallium is examined after heat and surface treatments of aluminium foils containing either 120 or 1300 ppm gallium, with low enrichments of gallium at the surfaces arising from foil manufacture. Vacuum heat treatment at 823 K for 20 ks caused negligible additional enrichment, probably associated with the high solubility of gallium in aluminium. Subsequent alkaline etching in 0.25 M sodium hydroxide for 60 s at 348 K increased significantly enrichments, to about 3.2×10 14 and 3.6×10 15 Ga atoms cm −2 for the foils containing 120 and 1300 ppm gallium respectively. The enrichments were probably located in both the metal and the overlying etching products. In contrast, electropolishing in perchloric acid/ethanol eliminated pre-existing enrichments, probably due to activation of the foil, with no enrichment developing during the electropolishing procedure. Barrier-type anodic films formed on the alkaline-etched foils contained gallium species, with increased concentrations at the film surface. Gallium enriched the metal region immediately beneath the anodic film during anodizing and led eventually to detachment of the growing film from the etched foil, followed by growth of a second film beneath the detached film. The combined amounts of gallium in the anodic film and enriched metal layer were similar to the levels at the surface regions of the etched foils. The anodic films formed on the electropolished foils, with no pre-existing enrichment, were free of gallium species and remained attached to the foils, since insufficient gallium could enrich in the metal beneath the anodic film during the relatively short period of anodizing.