Microstructural and high-temperature performance evolution of Al-doped lamellar porous Ti3SiC2 using freeze casting
Source abstract
Abstract
To enhance high-temperature oxidation resistance, Al was introduced into lamellar porous Ti 3SiC 2 , reducing wall porosity from 16% to 7%, signifying wall densification. DFT calculations revealed that Al substitution for Si in the silicon layer caused lattice distortion, raising lattice parameter (d) from 0.2278 to 0.2289 nm, and disrupting energy, weakening bonds and reducing fracture energy absorption. Consequently, diffusion activation energy dropped from 370 kJ/mol to 230 kJ/mol, significantly impacting high-temperature stability. Yet, Al doping improved wall and oxide film densification, lowering the oxidation rate from 0.0097 to 0.0073 mg 2/cm 4 ·h, leading to remarkable high-temperature electromagnetic shielding with SSE of 71.1 dB.
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Research context
OpenAlex topics: MXene and MAX Phase Materials · Aluminum Alloys Composites Properties · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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