Effect of placement of aluminium foil on growth of etch tunnels during DC etching
Source abstract
Abstract
Abstract The tunnel growth behaviour of aluminium foil etched in different placement has been investigated. The limiting length of tunnel of specimens in increasing order is: face-down, vertical, and face-up placement. Many sub tunnels branch on the wall surface of the main tunnel when aluminium is etched in face-down placement, while much fewer sub tunnels are formed when aluminium is etched in face-up placement. A novel etching model has been proposed to interpret the phenomenon, by considering the electrocapillary effect. It reveals that the status and transport of hydrogen bubbles inside the tunnel has a great influence on the tunnel growth.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Anodic Oxide Films and Nanostructures · Surface and Thin Film Phenomena · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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