Oxidation behavior of Al4SiC4 ceramic up to 1700°C

Abstract Isothermal oxidation behavior of Al 4 SiC 4 ceramics at the temperature range from 1200 °C to 1700 °C in air for 10–20 h was investigated. The results indicated that this material had an excellent oxidation resistance from 1200 °C to 1600 °C, and the kinetics of oxidation obeyed the parabolic law with an activation energy of 220 ± 20 kJ mol −1 . The oxide scales consisted of an outer oxide layer with higher density, a middle oxide layer with a few of large size pores and a reaction layer which is near to the matrix with a number of small size pores over the temperature ranges. A number of pores exist in the middle oxide scale. The oxide surface and cross-sectional morphologies were observed by scanning electron microscope (SEM) technique and the formation mechanism of the oxidation layers was also analyzed.