Controlled corrosion behaviors of copper in oxidizer solutions for chemical mechanical polishing: Influence of the decomposition products
Source abstract
Abstract
The influence of the oxidizers including H 2O 2, K 2S 2O 8, KMnO 4, KClO 4, KIO 4 and (NH 4) 2S 2O 8 on copper chemical mechanical poshing was systematically investigated. Microscopic observations, electrochemical characterizations and X-ray photoelectron spectroscopy depth profile analyses revealed that the corrosion and removal behaviors were determined by the decomposition product of the oxidizers, other than their oxidizing capabilities. All oxidizers, except the persulfate, generated significant quantities of OH - ions upon decomposition, which formed a dense passivation oxide film on copper surface. While the copper surfaces in the neutral persulfate solutions were porous and loose, promoting the oxidizer to penetrate and further corrode the inner layer.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Corrosion Behavior and Inhibition · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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