Oxidation kinetic behavior of SiBCN-Ta4HfC5 ceramics at 1600 °C
Source abstract
Abstract
In this study, the morphological/microstructural evolution and oxidation behavior of SiBCN-Ta 4HfC 5 ceramics at 1600 °C were explored and the oxidation kinetic mechanisms were revealed. The results show that the distribution form of tantalum hafnium oxide changes from aggregation distribution in the form of particles to annular distribution along the SiO 2 boundary. Oxidation kinetic constant of SiBCN-Ta 4HfC 5 is 215.97 µm 2/h, while pure SiBCN is k p = 1267.70 µm 2 /h. The excellent oxidation resistance of SiBCN-Ta 4HfC 5 is mainly attributed to the forming dense oxide layer, which effectively hinders the oxygen diffusion inward.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · MXene and MAX Phase Materials · Advanced materials and composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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