Role of helium ion irradiation in the corrosion of CVD−SiC in molten LiF−NaF−KF salt
Source abstract
Abstract
Abstract The role of helium ion irradiation in the corrosion of CVD−SiC in molten LiF−NaF−KF salt was studied. Results indicate that the corrosion of SiC relates to the diffusion of element Si. Impurities in molten LiF−NaF−KF salt react with SiC to drive the outward diffusion of element Si and graphitic carbon is further formed. Energetic helium ions break down the Si C bonds to form defects. Slight disorder has little effect on the corrosion of SiC, while the amorphous induced by helium ion irradiation significantly enhances the diffusion of element Si and thus increases the corrosion of SiC.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Silicon Carbide Semiconductor Technologies · Aluminum Alloys Composites Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. Katoh · 2021
2. Ingersoll · 2021
3. Wilson · 2021
4. Design, fabrication, and testing of ceramic plate–type heat exchangers with integrated flow channel design10.1111/j.1744-7402.2010.02573.x ↗
5. Compatibility of structural candidate materials with LiF-BeF2 molten salt mixture10.1016/S0022-3115(00)00250-6 ↗
6. Effects of Cr3+ on the corrosion of SiC in LiF−NaF−KF molten salt10.1016/j.corsci.2016.10.026 ↗
7. Corrosion of SiC induced by Hastelloy N alloy and its corrosion products in LiF−NaF−KF molten salt10.1016/j.corsci.2016.03.029 ↗
8. Effect of oxygen on the corrosion of SiC in LiF-NaF-KF molten salt10.1016/j.corsci.2015.11.014 ↗
9. Corrosion of silicon carbide in gases and alkaline melts10.1111/j.1151-2916.1976.tb09514.x ↗
10. High temperature alkali corrosion of SiC and Si3N410.1016/0378-3820(94)00113-8 ↗
11. Interaction between SiO2 and a KF-KCl-K2SiF6 melt10.1021/jp4086816 ↗
12. Swelling and X-ray peak broadening of high dose neutron irradiated SiC composite
13. Role of irradiation-induced defects on SiC dissolution in hot water10.1016/j.corsci.2016.08.007 ↗
14. Fluoroacidity evaluation in molten salts10.1016/j.electacta.2011.03.099 ↗
15. Attempt to classify various molten fluoride mixtures according to their salvation powers regarding metal fluorides
16. The effect of additives on activities in cryolite melts10.1007/BF02655924 ↗
17. Numerical study of the plasma chemistry in inductively coupled SF6 and SF6/Ar plasmas used for deep silicon etching applications10.1088/0022-3727/44/43/435202 ↗
18. Tight-binding quantum chemical molecular dynamics simulations for the elucidation of chemical reaction dynamics in SiC etching with SF6/O2 plasma10.1039/C5CP06515A ↗
19. Reactive ion etching of SiC thin films using fluorinated gases10.1116/1.583329 ↗
20. Reactive ion etching of silicon carbide in SF6 plasma: detection of CF, CF2, and SiF2 etch products10.1063/1.1395520 ↗
21. Effect of irradiation damage on corrosion of 4H-SiC in FLiNaK molten salt10.1016/j.corsci.2017.05.028 ↗
22. Displacement energy surface in 3C and 6H SiC10.1016/S0022-3115(99)00266-4 ↗
23. Investigation of the damage behavior in CVD SiC irratiated with 70 keV He ions by NEXAFS, Raman and TEM10.1016/j.jeurceramsoc.2016.11.046 ↗
24. Electron spin resonance in electron-irradiated 3C-SiC10.1063/1.343920 ↗
25. Spectroscopic studies of the structure of amorphous and microcrystalline SiC prepared by the polymer route10.1557/JMR.1992.0164 ↗
26. Physics of low density-of-states a-Si1-xCx films
27. Surface characterization of laser irradiated SiC ceramics by AES and XPS10.1007/s002160051467 ↗
28. Surface composition of CVD-grown α-SiC layers-an XPS and LEED study10.1016/0169-4332(95)00511-0 ↗
29. The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface10.1063/1.338215 ↗
30. Nucleation and growth of Si nanocrystals in an amorphous SiO2 matrix10.1103/PhysRevB.74.075334 ↗
31. XPS and XRD study of crystalline 3C-SiC grown by sublimation method10.1016/S0925-8388(98)00994-3 ↗
32. X-ray photoelectron spectroscopy (XPS) of hydrogenated amorphous silicon carbide (a-SixC1-x: H) prepared by the plasma CVD method10.1088/0022-3727/23/3/008 ↗
33. XPS study of hydrogen permeation effect on SiC-C films10.1016/S0168-583X(03)00963-7 ↗
34. Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films10.1016/S0169-4332(01)00491-3 ↗
35. Synthesis of ultra-thin carbon layers on SiC substrate by ion implantation10.1016/j.carbon.2015.05.046 ↗
36. X-ray photoelectron spectroscopy (XPS) and diffraction (XPD) study of a few layers of grapheme on 6H-SiC(0001)10.1016/j.susc.2013.04.006 ↗
37. Behavior of Si and C atoms in ion amorphized SiC10.1063/1.2431941 ↗
38. Pressure dependence of Raman phonons of Ge and 3C-SiC10.1103/PhysRevB.25.1151 ↗
39. Raman spectroscopy study of heavy-ion-irradiated α-SiC10.1088/0953-8984/18/22/022 ↗
40. Raman investigation of defective SiC nanocrystals10.1002/jrs.4769 ↗
41. Microstructure and thermal residual stress analysis of SiC fiber through Raman spectroscopy10.1002/jrs.4356 ↗