Total hemispherical radiation properties of oxidized nickel at high temperatures
Source abstract
Abstract
Abstract It is important to quantify the effect of oxide film on the total hemispherical radiation properties. This paper investigated the radiation properties of high-temperature oxidized 99.9% purity nickel. The scale-growth kinetics of nickel oxide film formed on nickel at oxidation temperature of 900 °C was analyzed. The apparent total hemispherical emissivities of oxidized nickel with various oxide film thicknesses were measured at high temperatures using a steady-state calorimetric technique. The dependence between the total hemispherical emissivity and oxide scale at various temperatures was determined.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Radiative Heat Transfer Studies · Calibration and Measurement Techniques · Thermal Radiation and Cooling Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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