Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS₂ on Ion Implantation Doped 4H‐SiC

Abstract In this paper, 2D/3D heterojunction diodes have been fabricated by pulsed laser deposition (PLD) of MoS₂ on 4H‐SiC(0001) surfaces with different doping levels, i.e., n⁻ epitaxial doping (≈10¹⁶ cm⁻³) and n⁺ ion implantation doping (>10¹⁹ cm⁻³). After assessing the excellent thickness uniformity (≈3L‐MoS₂) and conformal coverage of the PLD‐grown films by Raman mapping and transmission electron microscopy, the current injection across the heterojunctions is investigated by temperature‐dependent current–voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. A wide tunability of the transport properties is shown by the SiC surface doping, with highly rectifying behavior for the MoS₂/n⁻ SiC junction and a strongly enhanced current injection for MoS₂/n⁺ SiC one. Thermionic emission is found the dominant mechanism ruling forward current in MoS₂/n⁻ SiC diodes, with an effective barrier Φ_B = (1.04 ± 0.09) eV. Instead, the significantly lower effective barrier Φ_B = (0.31 ± 0.01) eV and a temperature‐dependent ideality factor for MoS₂/n⁺ SiC junctions is explained by thermionic‐field‐emission through the thin depletion region of n⁺ doped SiC. The scalability of PLD MoS₂ deposition and the electronic transport tunability by implantation doping of SiC represents key steps for industrial development of MoS₂/SiC devices.