DataVXAdvanced MaterialsPaper
journal article·2019-07

UV Light‐Emitting Diodes: Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer (Adv. Mater. 29/2019)

Haina Ci, Hongliang Chang, Ruoyu Wang, Tongbo Wei, Yunyu Wang, Zhaolong Chen, Yuanwei Sun, Zhipeng Dou, Zhiqiang Liu, Jinmin Li, Peng Gao, Zhongfan Liu

Advanced Materials· Volume 31· Issue 29
Publisher page
Source abstract

Abstract

The use of vertically oriented graphene nanowalls as a buffer layer for the growth of high-quality AlN film on a sapphire substrate to improve heat dissipation is proposed by Tongbo Wei, Zhiqiang Liu, Peng Gao, Zhongfan Liu, and co-workers in article number 1901624. Thus, their as-fabricated light-emitting diode shows a 37% increasement of light output power under a high injection current (350 mA) due to the temperature reduction and strain relaxation.
Source: openalex_inverted_index · Quality: baseline

Research context

Nanomaterials

OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Sensor and Energy Harvesting Materials

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Affiliations

Center for Nanochemistry (CNC) Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 P. R. China

State Key Laboratory of Solid‐State Lighting Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 P. R. China

Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

Electron Microscopy Laboratory, and International Center for Quantum Materials School of Physics Peking University Beijing 100871 P. R. China

Beijing Graphene Institute (BGI) Beijing 100095 P. R. China

Collaborative Innovation Centre of Quantum Matter Beijing 100871 P. R. China

References

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