Optimization of processing parameters of the chemical vapor deposition process for synthesizing high-quality single-walled carbon nanotube fluff and roving

Abstract The use of the Taguchi method to optimize the processing parameters for the synthesis of high-quality single-walled carbon nanotubes (SWCNTs) in a vertical chemical vapor deposition reactor was demonstrated. An investigation containing 18 experiments featuring different parameters and levels was performed. SWCNTs with a low intensity D-band to G-band ratio of 0.027 of a Raman spectrum were obtained when the optimal processing conditions were adopted. The quantitative contribution of the processing parameters can be calculated using the analysis of variance. According to the analysis, the reactor temperature and the evaporation temperature of ferrocene significantly affect the graphitization of the synthesized SWCNTs, while the chamber pressure exerts an insignificant effect. The formation of carbon nanotube films with entangled networks during synthesis was recorded using a digital camera, and a synthesis mechanism was proposed. Using the optimal parameters, SWCNT fluff with a diameter of 7.0 cm and SWCNT roving with a diameter of approximately 1.0 cm and a length of over 30.0 cm can be attained. In this work, field-emission scanning electron microscopy and Raman spectroscopy and high-resolution transmission electron microscopy were adopted to examine the morphology and microstructure, respectively.