Modeling for high-temperature dielectric behavior of multilayer C /Si3N4 composites in X-band
Source abstract
Abstract
Abstract The high-temperature dielectric behavior of multilayer Cf/Si3N4 composites fabricated by gelcasting and pressuureless sintering was intensively investigated at temperatures coverage up to 800 °C in X-band (8.2–12.4 GHz). Experimental results have shown the permittivity of Si3N4 matrix exhibits excellent thermo-stability with temperature coefficient lower than 10−3 °C−1. Besides, both the real and imaginary parts of permittivity of multilayer Cf/Si3N4 composites exhibit positive temperature coefficient characteristic which attributed to the enhancement of space charge polarization. Furthermore, temperature-dependent permittivity of Cf/Si3N4 composites is demonstrated to be well distributed on circular arcs with centers actually keep around the real ( e ' ) axis in Cole-Cole plane. Finally, the relaxation time for multilayer Cf/Si3N4 composites gradually increases from 216.1 ps to 250.2 ps when heated from room temperature to 800 °C, and is almost twice as much as a single cycle for electromagnetic wave in X-band which leads to continuous decrease in permittivity with frequency.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electromagnetic wave absorption materials · Advanced Antenna and Metasurface Technologies · Dielectric materials and actuators
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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