SiC–B4C composites for synergistic enhancement of thermoelectric property

Abstract SiC–B 4 C composites were fabricated by hot pressing of β-SiC and B 4 C powder mixture. The Seebeck coefficient was determined at 300–900 °C in air. The SiC–B 4 C composites exhibited very high value. Especially, the Seebeck coefficient of SiC–30wt.%B 4 C composite was about 700 μ/K at 900 °C. Such a high Seebeck coefficient is very attractive. Monolithic SiC and B 4 C had the Seebeck coefficient of 100–400 μV/K, respectively. In SiC–B 4 C composite system, the Seebeck coefficient had been increased by the combination of SiC and B 4 C. In TEM observation, many stacking faults were observed in SiC–B 4 C composites. The presence of stacking faults may be one reason for the high Seebeck coefficient of SiC–B 4 C composite.