journal article·2011-08

Dynamic behavior of nanometer-scale amorphous intergranular film in silicon nitride by in situ high-resolution transmission electron microscopy

Zaoli Zhang, Wilfried Sigle, Christoph T. Koch, Manfred Rühle

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Abstract

Abstract We report about the dynamic behavior of a nanometer-scale amorphous intergranular film (IGF) in a Si 3 N 4 ceramic by an in situ heating experiment in a high-resolution transmission electron microscopy (HRTEM). During the experiment the IGF gradually vanishes at 820 °C accompanied by the formation of crystal planes within the IGF. The IGF reappears after cooling back to room temperature. The results cannot be explained within the framework of a force balance model. We argue that the dynamic behavior of the IGF in our experiment originates from the open system observed.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Semiconductor materials and devices · Advanced ceramic materials synthesis · Silicon Nanostructures and Photoluminescence

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References (18)

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17. Estimation of total ionic concentrations in the amorphous phase: the composition of the original powder is 88.6wt.% Si3N4+2wt.% MgO+7.2wt.% La2O3+2.2wt.% SiO2. The amorphous phase is 11.4wt.% of the Si3N4 ceramic system. The mole concentration for MgO and La2O3 are nearly 0.011 and 0.0049mol/cm3. The concentrations of Mg2+ and La3+ in the amorphous phase are about 6.62 and 5.85(number/nm3). The total ion concentration within the whole amorphous phase is estimated to be in the range of 1×100–1×101nm−3. Here, only La3+ is assumed to provide positive charges since there is enough experimental evidence that La segregates in the interface. It should also be noted that the above estimation is the ideal case. Considering the loss of additives and the very low percentage of the IGF in the total amorphous phase (IGF only is approximately 1–0.1% of the total amorphous phase), the number density of mobile ions (La3+ concentration) located in IGF is roughly in the order of 10−3–10−2nm−3. In the calculation 5×10−3nm−3 is used. The ion charge Z, though is +3
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