Large Grain Copper Indium Diselenide Films

Large grain thin films of copper indium diselenide with a preferred {112} orientation have been prepared by ( i ) the deposition of nearly stoichiometric films of copper and indium on suitable substrates using vacuum evaporation or electrodeposition, and ( ii ) the heat‐treatment of Cu‐In films in a hydrogen‐selenium atmosphere at temperatures above 630°C. The compositional, structural, and electrical properties of the films have been evaluated. In an alternate approach, a copper film on a substrate was first converted into cuprous selenide, followed by the deposition of indium and selenization. The resulting films have the same properties as those from the selenization of Cu‐In films.