3% Ti‐Tungsten Diffusion Barriers: II . The Effect of Deposition Temperature and Nitrogen Inclusion
Source abstract
Abstract
The use of high aspect ratio contact structures with electroplated gold interconnects on state‐of‐the‐art bipolar integrated circuits requires very high performance diffusion barriers. In the present work, these are obtained by adding nitrogen to the sputtering ambient and optimizing the substrate temperature during deposition. This results in performance not obtainable previously with this material system.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Molecular Junctions and Nanostructures · Copper Interconnects and Reliability
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Affiliations
Applied Materials, Incorporated, Dallas, Texas 75251
Sharp Microelectronics Technology, Incorporated, Camas, Washington 98607
References
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