Electronic Properties of n‐Si(111) during Electrochemical Surface Transformation toward H‐Termination
Source abstract
Abstract
The electronic properties of an n‐Si(111) surface during the electrochemical H termination process are investigated by the use of the large signal surface photovoltage technique. A strong decrease of the density of interface states up to 2 · 10 11 eV −1 cm −2 and the development of a positive fixed charge at the interface is observed in connection with a decrease of the oxidation state of surface Si atoms. The results are interpreted by surface smoothing concurrent with the hydrogenation of the surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Electron and X-Ray Spectroscopy Techniques
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Affiliations
Hahn‐Meitner‐Institut, Abteilung Photovoltaik, 12489 Berlin, Germany
Hahn‐Meitner‐Institut, Abteilung Grenzflächen, 14109 Berlin, Germany
IRC Surface Science, Liverpool University, Liverpool L69 3BX, England
References
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