A Novel Method for Measurement of the Channel Length of Short Channel MOSFET's

A submicron effective channel length of MOSFET is measured accurately by means of an EBIC technique. For accuracy, it is necessary to vary the primary electron beam energy specifically to achieve lowest practical values. When the beam penetration depth in silicon is deeper than the junction depth, the peak of the EBIC does not accurately indicate the location of p‐n junction. The fluctuation involved in this measurement technique is very small, less than ±0.025 μm. By varying the incident beam voltage, a precise depth profile of the p‐n junctions, especially drawback of the junction which is caused by channel implantation, could be also measured.