Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam Epitaxy
Source abstract
Abstract
Using a thermal oxide of for masking, excellent planar structures of monocrystalline and polycrystalline were prepared on substrates by molecular beam epitaxy. Micron‐sized monocrystalline of device quality with sufficient electrical isolation by semi‐insulating polycrystalline regions were obtained. Planar‐type MESFET's were successfully fabricated to confirm the application potential of this technique.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fujitsu Laboratories Limited, 1015 Kamikodanaka, Nakahara‐ku, Kawasaki, Japan
References
Reference metadata was not supplied for this record.