Analysis of Phosphorus‐Diffused Layers in Silicon
Source abstract
Abstract
Using the Fair‐Tsai model of P diffusion in Si, equations have been derived which relate the total P concentration, electron concentration, sheet resistance, and junction depth of a P‐diffused layer. Curves are presented which show surface concentration as a function of the product, percentage of electrically active P as a function of surface concentration, and vs. for P‐implant doses ranging from .
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Semiconductor materials and interfaces · Semiconductor materials and devices
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Affiliations
Bell Laboratories, Reading, Pennsylvania 19604
References
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