The Improvement of Position‐Sensitive Photodiode Performance by Phosphorus Ion Implantation Gettering Technique
Source abstract
Abstract
The improvement of position‐sensitive photodiode (PSPD) performance by phosphorus ion implantation gettering technique has been studied. The dark current of junction‐type and nonlinearity of resistor‐type large area PSPDs are significantly reduced, These improvements are attributed to the reduction, in the device active region, of impurities and crystal structural defects which are gettered to the back side of the wafer. The most effectively gettered impurity atom is copper, which is identified by inductively coupled plasma atomic emission spectrometer (ICPAES).
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Analytical Chemistry and Sensors · Advanced Optical Sensing Technologies · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electronics, School of Electrical Engineering and Computer Science, The University of New South Wales, Kensington, Sydney, NSW, 2030, Australia
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan, China
References
Reference metadata was not supplied for this record.