journal article·1992-02-01Open access

Phase Relations in the Cu‐In‐S System and Growth of Large CuInS2 Single Crystals

M. L. Fearheiley, N. Dietz, H. J. Lewerenz

Abstract

The phase relations in the metal portion of the Cu‐In‐S system have been investigated by differential thermal analysis (DTA) and x‐ray diffraction (XRD). The pseudobinary reveals a region of liquid immiscibility indicating the extension of the two liquid region from the Cu‐S binary to the In‐S binary. This two liquid region is intersected by two eutectics which originate at the quasibinary system. In addition, the growth of large single crystals of have been facilitated by growth under elevated argon pressures. Growth in large temperature gradients results in a lamellar type phase, which shows good optical and electrical properties. Data from XRD, reflection high energy electron diffraction, and rocking curves are presented on the structural and morphological properties, and photoluminescence was used for a defect characterization of this material.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Phase-change materials and chalcogenides

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Affiliations

Hahn‐Meitner‐Institut, Bereich Strahlenchemie, Glienicker Strasse 100, 1000 Berlin 39, Germany

References

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