Growth and XPS Characterization of Anodic Telluride Films on Hg1 − x Cd x Te
Source abstract
Abstract
An anodic tellurization process to grow native telluride films on is described. This process requires two steps: first the growth of an anodic sulfide/oxide film and second the conversion of this film into an anodic telluride film. XPS studies suggest that the total conversion of the anodic sulfide/oxide film into an anodic telluride film is possible. The concentration of tellurium in the anodically grown telluride films can be controlled by controlling the concentration of sulfur and oxygen in the starting film.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Electronic and Structural Properties of Oxides
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Affiliations
Department of Electrical and Electronic Engineering, The University of Western Australia, Nedlands, Perth, WA 6907, Australia
Department of Physics, The University of Western Australia, Nedlands, Perth, WA 6907, Australia
Department of Chemistry, The University of Western Australia, Nedlands, Perth, WA 6907, Australia
References
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