Selective Chemically Assisted Ion Beam Etching of Si, Polysilicon, and SiO2 Using Ni‐Cr Masks and Cl2
Source abstract
Abstract
The etching of single‐crystal silicon, CVD polysilicon, thermally grown silicon oxides, and Ni‐Cr masks have been studied using a chemical‐assisted ion beam etching (CAIBE) process. Etch rates were measured as functions of gas flow rate, Ar + ion beam energy, and beam current density. Selectivities of Ni‐Cr:Si, Ni‐Cr:poly, and of 1:10, 1:9, and 1:4 were determined. Vertical profiles were obtained down to at least 100 nm linewidths using CAIBE.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Silicon Nanostructures and Photoluminescence
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Affiliations
Department of Physics, National Nanometer Laboratory, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
Department of Physics, Chalmers University of Technology, S‐412 96 Göteborg, Sweden
References
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