The Electric‐Field Assisted Solid‐State Reaction of Aluminum and Silicon Dioxide
Source abstract
Abstract
The rate of solid‐state reaction between Al and is found to be assisted by an electric field (Al negative) across the insulator. A novel model for the reaction mechanism is proposed in which the rate of reaction is determined by the rate of creation of reaction sites for Al at the surface as a result of transport of ionic Si away from the interface. An applied electric field acts to vary the activation energy of this process.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Graphene research and applications
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Affiliations
Department of Electrical Engineering, University of Toronto, Toronto, Ontario, M5S 1A4 Canada
References
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