Effect of BCl3 Dry Etching on InAlN Surface Properties
Source abstract
Abstract
Dry etched InAlN surfaces have been characterized by atomic force microscopy, current‐voltage measurements, and Auger electron spectroscopy. Electron cyclotron resonance discharges of , or all produce nitrogen deficient surfaces that promote leakage current in rectifying metal contacts, with the producing the least disruption of the InAlN surface properties.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · Semiconductor materials and devices
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Affiliations
Lucent Technologies, Bell Laboratories, Murray Hill, New Jersey 07974
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
References
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