Discussion of “On the Initial Oxidation Rate of Silicon” [A.G. Revesz (pp. 502–503, Vol 126, No. 3) and E. A. Irene (pp. 1708–1714, Vol 125, No. 10)]
Source abstract
Abstract
Abstract not Available.
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Source: openalex_inverted_index · Quality: short
Research context
OpenAlex topics: Semiconductor materials and devices · Silicon and Solar Cell Technologies · Ion-surface interactions and analysis
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Affiliations
IBM Thomas J. Watson Research Center Yorktown Heights, New York 10598
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