Densely aligned ZnO nanoneedle arrays prepared via room temperature growth
Source abstract
Abstract
The room temperature growth of ZnO nanoneedle arrays on seed layers was demonstrated via wet-chemical synthesis. The orientation of ZnO nanoneedles was found to be extremely high on the flat seed layer with high crystallinity, whereas a poor orientation was observed on rough seed layers. We expect that the direction of ZnO [0001] (c-axis) dictates the orientation of ZnO nanoneedles. With longer reaction time, ZnO nanoneedles grew dominantly in a length compared to a diameter. Dense ZnO nanoneedles with a high orientation is believed to be promising for many applications in optelectronics and photonics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Graduate school of Engineering, Nagoya Institute of Technology
References (21)
Show source-provided references
1. 1) Y. Li and G. A. Somorjai, Nano Lett., 10, 2289–2295 (2010).10.1021/nl101807g ↗
2. 2) Z. L. Wang, Mater. Sci. Eng. Rep., 64, 33–71 (2009).10.1016/j.mser.2009.02.001 ↗
3. 3) D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks and M. C. Hersam, Chem. Soc. Rev., 42, 2824–2860 (2013).10.1039/C2CS35335K ↗
4. 4) D. R. Miller, S. A. Akbar and P. A. Morris, Sens. Actuators B Chem., 211, 569–570 (2015).10.1016/j.snb.2015.02.086 ↗
5. 5) S. Monticone, R. Tufeu and A. V. Kanaev, J. Phys. Chem. B, 102, 2854–2862 (1998).10.1021/jp973425p ↗
6. 6) L. Vayssieres, Adv. Mater., 15, 464–466 (2003).10.1002/adma.200390108 ↗
7. 7) J. Y. Lao, J. Y. Huang, D. Z. Wang and Z. F. Ren, Nano Lett., 3, 235–238 (2003).10.1021/nl025884u ↗
8. 8) J. Grabowska, A. Meaney, K. K. Nanda, J.-P. Mosnier, M. O. Henry, J.-R. Duclère and E. McGlynn, Phys. Rev. B Condens. Matter, 71, 115439 (2005).10.1103/PhysRevB.71.115439 ↗
9. 9) J. Song and S. Lim, J. Phys. Chem. C, 111, 596–600 (2007).10.1021/jp0655017 ↗
10. 10) S. Cho, J.-W. Jang, J. S. Lee and K.-H. Lee, Nanoscale, 2, 2199–2202 (2010).10.1039/c0nr00278j ↗
11. 11) X. Wu, G. Lu, C. Li and G. Shi, Nanotech., 17, 4936–4940 (2006).10.1088/0957-4484/17/19/026 ↗
12. 12) Q. Li, K. Cheng, W. Weng, C. Song, P. Du, G. Shen and G. Han, Nanoscale Res. Lett., 6, 1–11 (2011).
13. 13) M. S. Geetha, H. Nagabhushana and H. N. Shivananjaiah, J. Sci. Adv. Mater. Devices, 1, 301–310 (2016).10.1016/j.jsamd.2016.06.015 ↗
14. 14) X. Cai, B. Han, S. Deng, Y. Wang, C. Dong, Y. Wang and I. Djerdj, CrystEngComm, 16, 7761–7770 (2014).10.1039/C4CE00899E ↗
15. 15) Z. L. Wang, J. Phys.-Condens. Mat., 16, R829–R858 (2004).10.1088/0953-8984/16/25/R01 ↗
16. 16) S. Vempati, J. Mitra and P. Dawson, Nanoscale Res. Lett., 7, 1–10 (2012).10.1186/1556-276X-7-470 ↗
17. 17) J. Z. Song, S. A. Kulinich, J. Yan, Z. G. Li, J. P. He, C. X. Kan and H. B. Zeng, Adv. Mater., 25, 5750–5755 (2013).10.1002/adma.201302293 ↗
18. 18) J. Bruncko, A. Vincze, M. Netrvalova, P. Šutta, D. Hasko and M. Michalka, Thin Solid Films, 520, 866–870 (2011).10.1016/j.tsf.2011.04.202 ↗
19. 19) Y. F. Gao, M. Nagai, Y. Masuda, F. Sato and K. Koumoto, J. Cryst. Growth, 286, 445–450 (2006).10.1016/j.jcrysgro.2005.10.072 ↗
20. 20) C. Coskun, H. Guney, E. Gür and S. Tüzemen, Turk. J. Phys., 33, 49–56 (2009).
21. 21) H.-C. Wang, C.-H. Liao, Y.-L. Chueh, C.-C. Lai, P.-C. Chou and S.-Y. Ting, Opt. Mater. Express, 3, 295–306 (2013).10.1364/OME.3.000295 ↗