Properties and field emission characteristics of Ga:ZnO whiskers
Source abstract
Abstract
Ga:ZnO whiskers were grown by atmospheric chemical vapor deposition on single crystalline silicon (100). By adjusting the concentration of the gallium dopant, the crystallite density and radius of curvature could be varied. The c-axis orientation of the Ga:ZnO crystallite was less than that of the Al:ZnO crystallite. The field emission characteristics of Ga:ZnO whisker emitters were investigated by varying the crystallite density and radius of curvature. Moreover, when the crystallite density was in the range 0.8 × 104-1.6 × 104/mm2 and the crystallite radii of curvature were in the range 46-106 nm, the electric field, E, necessary to obtain a current density, J, of 100 μA/cm2 was in the range 5.3-5.7 V/μm.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chemistry & Chemical Process Laboratory, Asahi Kasei Chemicals Co., Ltd.
Central Research Laboratory, Asahi Kasei Co., Ltd.
Department of Materials Science and Technology, Nagaoka University of Technology
References (19)
Show source-provided references
1. 10.1016/j.matlet.2007.08.04510.1016/j.matlet.2007.08.045 ↗
2. 2) C. Lin, W. Lin, C. Hsiao, K. Lin and Y. Li, J. Phys. D., 41, 045301, 1 (2008).
3. 3) M. Li, D. Wang, Y. Ding, X. Guo, S. Ding and H. Jin, Mater. Sci. Eng. A., 452-453, 417 (2007).10.1016/j.msea.2006.10.089 ↗
4. 10.1063/1.162577410.1063/1.1625774 ↗
5. 5) H. Y. Yang, S. P. Lau, S. F. Yu, L. Huang, M. Tanemura, J. Tanaka, T. Okita and H. H. Hng, Nanotechnology, 16, 1300 (2005).10.1088/0957-4484/16/8/053 ↗
6. 6) A. Wei, X. W. Sun, C. X. Xu, Z. L. Dong, M. B. Yu and W. Huang, Appl. Phy. Lett., 88, 213102 (2006).10.1063/1.2206249 ↗
7. 10.1063/1.165132810.1063/1.1651328 ↗
8. 10.1143/jjap.38.L58610.1143/jjap.38.L586 ↗
9. 9) M. Satoh, N. Tanaka, Y. Ueda, S. Ohshio and H. Saitoh, Jpn. J. Appl. Phys., 38, 6873-6877 (1999).10.1143/JJAP.38.6873 ↗
10. 10) H. Saitoh, M. Satoh, N. Tanaka, Y. Ueda and S. Ohshio, Adv. in Sci. and Tech., 29[part B], 873 (2000).
11. 10.1098/rspa.1928.009110.1098/rspa.1928.0091 ↗
12. UEDA YOSHIKAZU · 2008 · 47 · 158410.1143/JJAP.47.1584 ↗
13. UEDA YOSHIKAZU · 2008 · 47 · 547210.1143/JJAP.47.5472 ↗
14. 14) "Periodic Table of the Elements," 3rd ed., Wiley, Weinheim (2002).
15. 10.1143/JJAP.2.3110.1143/JJAP.2.31 ↗
16. SAITOH H · 2002 · 110 · 69310.2109/jcersj.110.693 ↗
17. 17) B. K. Chakraverty and G. M. Pound, Acta Metall., 12, 851 (1964).10.1016/0001-6160(64)90143-9 ↗
18. 18) J. Yoo, W. Park and G. C. Yi, J. Vac. Technol. B, 23, 1970 (2005).10.1116/1.2037667 ↗
19. 10.1063/1.151881010.1063/1.1518810 ↗