Laser chemical vapor deposition of TiN film on Ti(C,N)-based cermet substrate using Ti(OiPr)2(dpm)2-NH3 system
Source abstract
Abstract
TiN films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition using titanium isopropoxide dipivaloylmethane [Ti(OiPr)2(dpm)2] and ammonia (NH3) as precursors. The effects of deposition temperature (Tdep) and laser power (PL) on the crystal phase, microstructure and adhesion were investigated. TiN film was prepared at Tdep > 903 K (PL > 100 W). The microstructure of TiN film changed from rose-like grains to pyramid-like grains to aggregate grains with increasing PL and Tdep. Highly adhesive film was obtained at moderate Tdep = 1047 K (PL = 120 W).
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Copper Interconnects and Reliability · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute for Materials Research, Tohoku University
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