Thermomechanical Properties of Chemically Vapor Deposited Silicon Carbide Filaments
Source abstract
Abstract
The thermal expansion of filaments of CVD SiC was measured parallel and perpendicular to the filament axis. A discontinuity in the expansion versus temperature curve near the melting point of Si indicated the presence of free Si. The magnitude of the discontinuity was used to estimate the amount of the Si in the fibers. The presence of free Si is discussed in relation to the design and maximum‐use temperature of SiC‐filament‐reinforced ceramic composites.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Aluminum Alloys Composites Properties · Silicon Carbide Semiconductor Technologies
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References (9)
Show source-provided references
1. H.DeboltandT.Henze “Silicon Carbide Filaments and Method ” U.S. Pat. No. 4 068 037 Jan. 10 1978.
2. 10.1007/BF0111227710.1007/BF01112277 ↗
3. 10.1007/BF0114472310.1007/BF01144723 ↗
4. 10.1111/j.1551-2916.1986.tb00037.x10.1111/j.1551-2916.1986.tb00037.x ↗
5. Kern E. L. · 1968 · S25
6. Christin F. · 1980 · 154
7. Elliot R. P. · 1965 · 228
8. 1980 · E‐103
9. A. E.Heuer; private communication 1989.