Defect Formation during Plastic Deformation of Y2O3‐Partially‐Stabilized ZrO2 Single Crystals
Source abstract
Abstract
Y 2 O 3 ‐partially‐stabilized ZrO 2 single crystals have been deformed at 1400°C and subsequently investigated in the high‐voltage electron microscope. At an yttria concentration of 6.8 mol%, elongated planar defects with APB‐like contrast arose on four (101) planes. This unusual [101](101) glide system was activated due to a more favorable atomic arrangement of the planar defects on (101) planes instead of (010) ones.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
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References (7)
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