journal article·2014-02

Direct Evidence for the Modulation Caused by Ti Substitution of Ta in a ( Ta 2 O 5 ) 0.92 ( TiO 2 ) 0.08 Ceramic by Analytical Electron Microscopy

Xiaodong Wang, Jian‐Min Zuo, Hefei Hu, Yonghua Rong

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Abstract

The high‐temperature tetragonal structure of Ta 2 O 5 was observed in a Ta 2 O 5 ceramic sample doped with 8 at.% TiO 2 . Direct evidences for the modulation along [ ] direction caused by Ti replacing Ta are obtained based on atomic‐resolution high‐angle annular dark‐field lattice imaging and electron energy loss spectroscopy analysis. The atomic mechanism of Ti substitution of Ta is explicitly described based on the structure model along [110] direction projection.
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Research context

OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering Shanghai Jiao Tong University Shanghai 200240 China

Department of Material Science and Engineering Materials Research Laboratory University of Illinois at Urbana‐Champaign Urbana 61801 Illinois

Frederick Seitz Materials Research Laboratory University of Illinois at Urbana‐Champaign Urbana 61801 Illinois

Department of Physics University of Illinois at Urbana‐Champaign Urbana 61801 Illinois

Funding

National Natural Science Foundation of China · US Department of Energy, Office of Science, Office of Basic Energy Sciences

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