Characteristics of Lead Magnesium Niobate Thin Film Prepared by Sol‐Gel Processing Using a Complexing Agent

The effects of a complexing agent on the synthesis of a Pb(Mg _1/3 Nb _2/3 )O ₃ (PMN) solution and the dielectric properties of a PMN thin film were investigated. When triethanolamine (TEA) was used as a complexing agent, a homogeneous and stable precursor solution was synthesized in air and a crack‐free thin film with the nearly pure perov‐skite phase and an average grain size of 0.2–0.4 μm was prepared by heating at 800°C for 5 min. The PMN thin film showed a relative permittivity of 1800 and tan δ of 0.01 at room temperature. The voltage dependence of polarization for the thin film was also presented.