Sintering and Properties of Materials Synthesized on the Basis of Silicon, Boron, and Titanium Carbides by Electrospark Sintering
Source abstract
Abstract
Some specific features inherent in the electrospark sintering of materials based on silicon carbide with additives of boron and titanium carbides have been studied. The titanium carbide impurity activates the consolidation of silicon carbide and deactivates the consolidation of a mixture of boron and titanium carbides at the initial stage of sintering. The structure and physicomechanical properties of SiC–В4С–(0–15 wt %) ТiС materials have been studied. Titanium carbide decelerates the growth of a silicon carbide grain by nearly 3 times to increase the cracking resistance of silicon carbide with the impurities of titanium and boron carbides by 40–45%. A material with a cracking resistance of 6.3 MPa/m1/2 and an increased wear resistance has been synthesized.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Surface Treatment and Coatings · Advanced materials and composites · Engineering Technology and Methodologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
Show source-provided references
1. Gnesin, G.G., Karbidokremnievye materially (Silicon Carbide Materials), Moscow: Metallurgiya, 1977.
2. Kriegesmann, J., Processing of silicon carbide-based ceramics, in Comprehensive Hard Materials, vol. 2: Ceramics, Sarin, V.K., Ed., Amsterdam: Elsevier, 2014, pp. 89–175.10.1016/B978-0-08-096527-7.00023-4 ↗
3. Garshin, A.P., Karlin, V.V., Oleinik, G.S., and Ostroverkhov, V.I., Konstruktsionnye karbidokremnievye materialy (Constructional Silicon-Carbide Materials), Leningrad: Mashinostroenie, 1975.
4. Mel’nikova, V.A., Kazakov, V.K., Kislyi, P.S., and Sul’zhenko, V.K., The structure and properties of silicon carbide–aluminum nitride ceramics at high temperatures, Sverkhtverd. Mater., 1991, no. 5, pp. 33–36.
5. Prochaska, S. and Scanlan, R.M., Effect of boron and carbon on sintering of SiC, J. Am. Ceram. Soc., 1975, vol. 58, p. 72.10.1111/j.1151-2916.1975.tb18990.x ↗
6. Lange, F.F. and Gupta, T.K., Sintering of SiC with boron compounds, J. Am. Ceram. Soc., 1976, vol. 59, pp. 537–638.10.1111/j.1151-2916.1976.tb09435.x ↗
7. Kim, Y.-W., Lee, S.-G., and Lee, Y.-I., Pressureless sintering of SiC–TiC composites with improved fracture toughness, J. Mater. Sci., 2000, vol. 35, no. 22, pp. 5569–5574.10.1023/A:1004848828322 ↗
8. Ahmoye, D. and Krstic, V.D., Reaction sintering of SiC composites with in situ converted TiO2 to TiC, J. Mater. Sci., 2015, vol. 50, no. 7, pp. 2806–2812.10.1007/s10853-015-8838-y ↗
9. Kim, K.M., Jang, S.H., Kim, Y.-W., and Seo, W.-S., Thermal and mechanical properties of SiC–TiC0.5N0.5 composites, J. Am. Ceram. Soc., 2014, vol. 98, no. 2, pp. 616–623.10.1111/jace.13311 ↗
10. Lee, Y.-I. and Kim, Y.-W., Toughening mechanisms in SiC–TiC composites, J. Ceram. Soc. Jpn., 2004, vol. 112, no. 1301, pp. 18–21.10.2109/jcersj.112.18 ↗
11. Eidzi, K., Ceramic materials processed by electro-pulsed method, Oyo Kick Kogaku, 1983, vol. 24. no. 13, pp. 178–183.
12. Perevislov, S.N., Nesmelov, D.D., and Tomkovich, M.V., Synthesis of materials based on SiC and Si3N4 by high-pulse plasma sintering, Vestn. Nizhegorod. Univ. im. N.I. Lobachevskogo, 2013, no. 2, pp. 107–114.
13. Lee, J.-H., Ju, J.-Y., Kim, C.-H., and Shin, Y.-D., A study on optimum spark plasma sintering conditions for conductive SiC–ZrB2 composites, J. Electr. Eng. Technol., 2011, vol. 6, no. 4, pp. 543–550.10.5370/JEET.2011.6.4.543 ↗
14. Grasso, S., Saunders, T., Porwal, H., and Reece, M., Ultra-high temperature spark plasma sintering of α-SiC, Ceram. Int., 2015, vol. 41, pp. 225–230.10.1016/j.ceramint.2014.08.062 ↗
15. Zhao, J., Garay, J.E., Anselmi-Tamburini, U., and Munir, Z.A., Directional electromigration-enhanced interdiffususion in the Cu–Ni system, J. Appl. Phys., 2007, vol. 102, 114902.10.1063/1.2809444 ↗
16. Kim, S.W., Kim, S.G., Jung, J.I., Kang, S.J.L., and Chen, I.W., Enhanced grain boundary mobility in yttria-stabilized cubic zirconia under an electric current, J. Am. Ceram. Soc., 2011, vol. 94, no. 12, pp. 4231–4238.10.1111/j.1551-2916.2011.04800.x ↗
17. Grasso, S., Kim, E.-Y., Saunders, T., Yu, M., Choi, S.-H., Tudball, A., and Reece, M., Ultra-rapid crystal growth of textured SiC using Flash Spark Plasma Sintering (FSPS) route, Cryst. Growth Des., 2016, vol. 16, no. 4, pp. 2317–2321.10.1021/acs.cgd.6b00099 ↗
18. Istomina, E.I., Istomin, P.V., and Nadudkin, A.V., Influence of titanium carbide spiometry on the formation of the Ti3SiC2 phase in the TiC–SiO system, Izv. Komi Nauchn. Tsentra, Ural. Otd., Ross. Akad. Nauk, 2011, vol. 8, no. 4, pp. 24–28.
19. Kislyi, P.S., Kuzenkova, M.A., Bodnaruk, N.I., and Grabchuk, B.L., Karbid bora (Boron Carbide), Kiev: Naukova Dumka, 1988.
20. Ivzhenko, V.V., Kaidash, O.N., Sarnavskaya, G.F., Dub, S.N., and Tkach, V.N., Production and properties of hot-pressed materials based on silicon carbide with additions of boron and titanium carbides, Superhard Mater., 2016, vol. 38, no. 5, pp. 306–313.10.3103/S1063457616050026 ↗
21. Evans, A.G. and Langdon, T.G., Structural Ceramics, Oxford: Pergamon, 1976.
22. Maistrenko, A.L. and Dub, S.N., Prediction of wear resistance of brittle materials by hardness and crack resistance, Zavod. Lab., 1993, no. 1, pp. 52–57.