The Study of the Etching Resistance of YOF Coating Deposited by Atmospheric Plasma Spraying in HBr/O2 Plasma
Source abstract
Abstract
Yttrium oxyfluoride (YOF) coatings with different oxygen content were prepared using atmospheric plasma spraying (APS) technology. The etching resistance of the coatings in HBr/O2 plasma was investigated. Shifts in diffraction peaks of the X-ray diffraction, along with XPS analysis conducted before and after etching, demonstrated that Br ions could replace O and F ions and fill the oxygen vacancies after exposure to HBr/O2 plasma, which is supported by the first-principles calculations. Br ions formed a protective layer on the surface of the YOF coating, slowing down further etching by Br ions. By adjusting the oxygen mass fraction in YOF powder, the oxygen vacancy concentration and Br ion filling were regulated to enhance etching resistance. YOF coatings with 6% oxygen content exhibited improved etching resistance compared to YOF coatings with 3% and 9% oxygen content. This improvement was primarily due to the increased Br ion concentration. These findings provide a new approach for developing coatings with enhanced etching resistance.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · ZnO doping and properties · Diamond and Carbon-based Materials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Shanghai University, 333 Nanchen Road, Shanghai 200444, China
Shanghai Huali Integrated Circuit Corporation, 6 Liangteng Road, Pudong New Area, Shanghai 201314, China
Chongqing Genori Technology Co., Ltd., No. 66, Sendi Avenue, Xipeng Town, Jiulongpo District, Chongqing 401326, China
Zhejiang Institute of Advanced Materials, SHU, Jiashan 314113, China
Funding
National Key R & D Program of China
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