Controllable Goos-Hänchen Shift in Photonic Crystal Heterostructure Containing Anisotropic Graphene

In this study, we investigate the electrically and magnetically tunable Goos–Hänchen (GH) shift of a reflected light beam at terahertz frequencies. Our study focuses on a photonic crystal heterostructure incorporating a monolayer anisotropic graphene. We observe a tunable and enhanced GH shift facilitated by a drastic change in the reflected phase at the resonance angle owing to the excitation of the topological edge state. Considering the quantum response of graphene, we demonstrate the ability to switch positive and negative GH shifts through the manipulation of graphene’s conductivity properties. Moreover, we show that the GH shift can be actively tuned by the external electric field and magnetic field, as well as by controlling the structural parameters of the system. We believe that this tunable and enhanced GH shift scheme offers excellent potential for preparing terahertz shift devices.