journal article·2024-04-20Open access

Effect of Annealing on Stress, Microstructure, and Interfaces of NiV/B4C Multilayers

Chenyuan Chang, Zhenbo Wei, Hui Jiang, Hangjian Ni, Wentao Song, Jialian He, Simeng Xiang, Zhanshan Wang, Zhe Zhang, Zhong Zhang

Coatings· Volume 14· Issue 4

Abstract

The functionality and reliability of nanoscale multilayer devices and components are influenced by changes in stress and microstructure throughout fabrication, processing, and operation. NiV/B4C multilayers with a d-spacing of 3 nm were prepared by magnetron sputtering, and two groups of annealing experiments were performed. The stress, microstructure, and interface changes in NiV/B4C after annealing were investigated by grazing-incidence X-ray reflectometry (GIXR), grazing-incidence X-ray diffraction (GIXRD), X-ray diffuse scattering, and grazing-incidence small-angle X-ray scattering (GISAXS). The temperature dependence experiments revealed a gradual shift in the multilayer stress from compression to tension during annealing from 70 °C to 340 °C, with the stress approaching near-zero levels between 70 °C and 140 °C. The time-dependent experiments indicated that most of the stress changes occurred within the initial 10 min, which showed that prolonged annealing was unnecessary. Combining the X-ray diffraction and X-ray scattering measurements, it was found that the changes in the thickness, interface roughness, and lateral correlation length, primarily due to crystallization, drove the changes in stress and microstructure.
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Research context

OpenAlex topics: Microstructure and mechanical properties · Diamond and Carbon-based Materials Research · Semiconductor materials and interfaces

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Advanced Micro-Structured Materials, MOE, Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China

Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Pudong District, Shanghai 201204, China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China (NSFC)

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