Influence of Processing Time in Hydrogen Plasma to Prepare Gallium and Aluminum Codoped Zinc Oxide Films for Low-Emissivity Glass
Source abstract
Abstract
Low-emissivity glass has high transmission in the visible region and high reflectivity in the infrared region. Gallium and aluminum codoped zinc oxide (GAZO) processed by hydrogen (H2) plasma treatment holds promise for fabricating good low-emissivity glass. The applied processing time is one of the key factors in plasma treatment. The GAZO films were prepared by in-line sputtering at room temperature, and the effect of using different plasma processing times on the structural, electrical and optical properties of the films were surveyed. Experimental results indicate that H2 plasma treatment of GAZO film samples indeed influenced the structure, optical and electrical properties. An appropriate processing time can improve the electrical properties and reduce the emissivity of GAZO films. The optimum processing time is 5 min for plasma treatment of GAZO films. The electrical resistivity and emissivity of plasma-annealed films for 5 min decrease by 59% and 55% compared to those of as-deposited GAZO films. Values of 5.3 × 10−4 Ω-cm in electrical resistivity, 0.13 in emissivity and 94% in average optical transmittance in the visible wavelength region could be obtained for GAZO films after H2 treatment of 5 min in this work for low-emissivity glass applications.
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Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical Engineering, Kun Shan University, No. 195, Kunda Rd., Yongkang Dist., Tainan 710, Taiwan
Green Energy Technology Research Center, Kun Shan University, No. 195, Kunda Rd., Yongkang Dist., Tainan 710, Taiwan
Funding
Ministry of Science and Technology of Taiwan · Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University
References (35)
Show source-provided references
1. Novel Low-E filter for architectural glass pane10.1016/j.enbuild.2019.109558 ↗
2. Energy Saving Potential of Low-e Coating Based Retrofit Double Glazing for Tropical Climate10.1016/j.enbuild.2019.109570 ↗
3. Longtime solar performance estimations of low-E glass depending on local atmospheric conditions10.1016/j.solmat.2022.111730 ↗
4. Low-emissivity materials for building applications: A state-of-the-art review and future research perspectives10.1016/j.enbuild.2015.03.024 ↗
5. Electrical, optical and structural properties of silver-based multilayer films deposited by magnetron sputtering10.1007/s10854-019-02205-z ↗
6. Nikitenkov, N. (2017). Silver-based low-emissivity coating technology for energy-saving window applications. Modern Technologies for Creating the Thin-film Systems and Coatings, InTechOpen. [1st ed.]. Chapter 20.10.5772/63326 ↗
7. Heat treatment and bending of low-e glass10.1016/S0040-6090(99)00087-5 ↗
8. Highly conducting and transparent low-E window films with high figure of merit values based on RF sputtered Al and in co-doped ZnO10.1016/j.mssp.2020.105240 ↗
9. Preparation and characterization of sputtered aluminum and gallium co-doped ZnO films as conductive substrates in dye-sensitized solar cells10.1016/j.cej.2013.01.006 ↗
10. Characteristics of Al-doped, Ga-doped and In-doped zinc-oxide films as transparent conducting electrodes in organic light-emitting diodes10.1016/j.cap.2010.02.036 ↗
11. Optimization of Al-doped ZnO films by RF magnetron sputtering at room temperature for Cu (In, Ga) Se2 solar cells10.1088/1742-6596/1549/4/042006 ↗
12. Revisiting the electrical and optical transmission properties of co-doped ZnO thin films as n-type TCOs10.1016/j.pmatsci.2018.03.004 ↗
13. ZnO-based transparent conductive thin films: Doping, performance, and processing10.1155/2013/196521 ↗
14. Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system10.1016/j.cap.2010.02.028 ↗
15. Sol–gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study10.1016/j.apsusc.2013.11.062 ↗
16. A Comparative Study of Spin Coated Transparent Conducting Thin Films of Gallium and Aluminum Doped ZnO Nanoparticles10.1155/2015/238123 ↗
17. Low temperature synthesis of radio frequency magnetron sputtered gallium and aluminium co-doped zinc oxide thin films for transparent electrode fabrication10.1016/j.apsusc.2016.08.081 ↗
18. Impact of Al and Ga co-doping with different proportion in ZnO thin film by DC magnetron sputtering10.1007/s10854-016-4679-y ↗
19. Investigation of aluminum–gallium Co-doped zinc oxide targets for sputtering thin film and photovoltaic application10.1016/j.jallcom.2013.04.075 ↗
20. Über Beziehungen des Reflexions- und Emissionsvermögens der Metalle zu ihrem elektrischen Leitvermögen10.1002/andp.19033160811 ↗
21. Effects of substrate temperature on the structural, morphological, electrical and optical properties of Al and Ga co-doped ZnO thin films grown by DC magnetron sputtering10.1016/j.matlet.2015.01.130 ↗
22. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films10.1186/1556-276X-7-639 ↗
23. Effects of H2 plasma treatment on properties of ZnO:Al thin films prepared by RF magnetron sputtering10.1016/j.surfcoat.2011.05.033 ↗
24. Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film10.1016/j.vacuum.2019.02.006 ↗
25. Influence of hydrogen plasma thermal treatment on the properties of ZnO:Al thin films prepared by dc magnetron sputtering10.1016/j.vacuum.2014.04.022 ↗
26. The annealing effect on damp heat stability of AGZO thin films prepared by DC moving magnetron sputtering10.1016/j.cap.2011.01.014 ↗
27. Investigation of electronic and optical properties in Al-Ga codoped ZnO thin films10.1016/j.cap.2011.09.008 ↗
28. In-line sputtered gallium and aluminum codoped zinc oxide films for organic solar cells10.1155/2014/916189 ↗
29. Post-annealed Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films for Low Emissivity Glass10.20964/2020.05.75 ↗
30. Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices10.1186/1556-276X-9-562 ↗
31. Meen, T.-H., Prior, S., and Lam, A. (2015). Thin film & device process Properties of hydrogen plasma treated Gallium and Aluminum co-doped Zinc Oxide films. Innovation in Design, Communication and Engineering, CRC Press. [1st ed.].10.1201/b18737-192 ↗
32. Novel properties of AZO film sputtered in Ar + H2 ambient at high temperature10.1016/j.vacuum.2005.12.011 ↗
33. Al-doped ZnO thin films deposited by reactive frequency magnetron sputtering: H2-induced property changes10.1016/j.tsf.2006.08.021 ↗
34. Hydrogen as a Cause of Doping in Zinc Oxide10.1103/PhysRevLett.85.1012 ↗
35. Twisted-motion substrate with sustained azimuthal rotation effect on the growth of AZO thin films by rf-sputtering10.1016/j.ijleo.2021.166561 ↗