Interaction of Methane Concentration and Deposition Temperature in Atmospheric Laser Based CVD Diamond Deposition on Hard Metal
Source abstract
Abstract
For laser-based plasma chemical vapour deposition (CVD) of diamond on hard metal at atmospheric pressure, without a vacuum chamber, the interaction between the deposition temperature and the methane concentration has to be understood to adjust the coating thickness, deposition duration, and medium diamond crystal size. The hypothesis of this study is that a wider range of methane concentrations could be used to deposit microcrystalline diamond coatings due to the increasing etching and deposition rates with rising deposition temperatures. The deposition of the CVD diamond coatings was carried out on K10 hard metal substrates. The process temperature and the methane concentration were varied from 650 to 1100 °C and from 0.15% to 5.0%, respectively. The coatings were analysed by scanning electron and 3D laser-scanning confocal microscopy, energy dispersive X-ray and micro-Raman spectroscopy, as well as cryofracture-based microscopy analysis. The results showed that microcrystalline diamond coatings could be deposited in a wider range of methane concentrations when increasing the process temperature. The coating thickness saturates depending on the process temperature even though the methane concentration constantly increases. The coating thickness increases with an increasing deposition temperature until the cobalt diffusion hinders the deposition at the process temperature of 1100 °C.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · High-pressure geophysics and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
BIAS—Bremer Institut für angewandte Strahltechnik GmbH, Klagenfurter Str. 5, 28359 Bremen, Germany
Carl von Ossietzky University Oldenburg, Ammerländer Heerstr. 114-118, 26129 Oldenburg, Germany
Funding
Deutsche Forschungsgemeinschaft
References (19)
Show source-provided references
1. Song, C., Lee, Y., Heo, S., Hwang, N.-M., Choi, S., and Kim, K. (2018). Computer Simulation of Temperature Parameter for Diamond Formation by Using Hot-Filament Chemical Vapor Deposition. Coatings, 8.10.3390/coatings8010015 ↗
2. On the formation of diamond coatings on WC/Co hard metal tools10.1016/0263-4368(96)83424-X ↗
3. Interactions of hard metal substrates during diamond deposition10.1016/S0263-4368(98)80101-7 ↗
4. Temperature dependence of species concentrations near the substrate during diamond chemical vapor deposition10.1063/1.354765 ↗
5. Diamond deposition on cemented carbide by chemical vapour deposition using a tantalum filament10.1007/BF00581110 ↗
6. Tribological properties and cutting performance of boron and silicon doped diamond films on Co-cemented tungsten carbide inserts10.1016/j.diamond.2013.01.004 ↗
7. In situ incorporation of silicon into a CVD diamond layer deposited under atmospheric conditions10.1016/j.diamond.2016.01.021 ↗
8. Peters, M.G., and Cummings, R.H. (1993). (5236740A), Patent US, Available online: https://patents.google.com/patent/US5236740A/en.
9. Feedback control of the substrate surface temperature in a laser-induced plasma CVD process
10. Raman spectroscopy of amorphous, nanostructured, diamond-like carbon, and nanodiamond10.1098/rsta.2004.1452 ↗
11. Resonant Raman spectroscopy of disordered, amorphous, and diamond-like carbon10.1103/PhysRevB.64.075414 ↗
12. Microscopic properties of MPCVD diamond coatings studied by micro-Raman and micro-photoluminescence spectroscopy10.1007/s12034-015-0860-9 ↗
13. Optimisation of the new time-modulated CVD process using the Taguchi method10.1016/j.tsf.2004.08.074 ↗
14. Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC-Co substrates10.1016/S1003-6326(15)63665-2 ↗
15. Process study of thermal plasma chemical vapor deposition of diamond, part I: Substrate material, temperature, and methane concentration10.1007/BF01447943 ↗
16. Influence of substrate temperature on formation of ultrananocrystalline diamond films deposited by HFCVD argon rich gas mixture10.1016/j.diamond.2009.05.002 ↗
17. Influence of the methane concentration on HF-CVD diamond under atmospheric pressure10.1016/S0042-207X(01)00365-7 ↗
18. Low-temperature diamond deposition by microwave plasma-enhanced chemical vapor deposition10.1063/1.101807 ↗
19. Diamond deposition on hardmetal substrates—Comparison of substrate pre-treatments and industrial applications10.1016/j.ijrmhm.2010.03.004 ↗