Investigation of Piezoelectric Properties of Wurtzite AlN Films under In-Plane Strain: A First-Principles Study
Source abstract
Abstract
This research article presents a comprehensive first-principles study on the piezoelectric properties of Wurtzite Aluminum Nitride (AlN) films under in-plane strain conditions. By calculating the piezoelectric tensor coefficients (e33, e31, and e15), we investigate the variation patterns of these constants with respect to in-plane strain. Our results indicate significant changes in the piezoelectric constants within the range of in-plane strain considered, exhibiting a linear trend despite opposite trends for e33 compared to e31 and e15. This study highlights the extreme sensitivity of AlN films’ piezoelectric performance to in-plane strain, suggesting its potential as an effective means for tuning and optimizing the piezoelectric properties of AlN-based devices.
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Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Ultrasonics and Acoustic Wave Propagation
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Affiliations
School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
Hebei Provincial Engineering Research Center of Metamaterials and Micro-Device, Shijiazhuang 050043, China
National Engineering Research Center for Colloidal Materials, School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
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