Chemical Composition, Structure, and Physical Properties of AlN Films Produced via Pulsed DC Reactive Magnetron Sputtering
Source abstract
Abstract
The chemical composition, structure, and physical properties of aluminum nitride (AlN) films obtained using pulsed DC reactive magnetron sputtering in asymmetric bipolar mode have been studied. X-ray diffraction and electron diffraction confirmed the composition of c–axis textured hexagonal AlN films required for piezoelectric applications. The surface of the films obtained is quite smooth; the arithmetic average roughness does not exceed 2 nm. Transmission electron microscopy has shown the presence of a transition layer at the film–substrate interface. Transmission electron microscopy and X-ray photoelectron spectroscopy depth profile analysis have shown that the films have an oxidized surface layer which has an influence on the optical model of the films derived from ellipsometric data. However, it does not significantly influence the films’ piezoresponse. Piezoelectric force microscopy indicated a piezoelectric effect in the films that is uniform over their surface.
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Research context
OpenAlex topics: Acoustic Wave Resonator Technologies · GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Functional Diagnostics of Low–Dimensional Structures for Nanoelectronics, Novosibirsk State University, 630090 Novosibirsk, Russia
Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia
Funding
Ministry of Education and Science of Russia
References (48)
Show source-provided references
1. Bhugra, H., and Piazza, G. (2017). Piezoelectric MEMS Resonators, Springer Nature.10.1007/978-3-319-28688-4 ↗
2. Assylbekova, M., Chen, G., Pirro, M., Michetti, G., and Rinaldi, M. (2021, January 25–29). Aluminum nitride combined overtone resonator for millimeter wave 5G applications. Proceedings of the 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS), Virtual Conference.10.1109/MEMS51782.2021.9375278 ↗
3. Discrete microfluidics based on aluminum nitride surface acoustic wave devices10.1007/s10404-014-1456-1 ↗
4. AlN–based surface acoustic wave resonators for temperature sensing applications10.1166/mex.2015.1247 ↗
5. Torgash, T.N., and Kozlov, A.G. (2020, January 3–7). Influence of Spacer in Acoustic Reflector on Parameters of Microelectronic BAW Resonators. Proceedings of the 2020 Wave Electronics and its Application in Information and Telecommunication Systems (WECONF), Petersburg, Russia.10.1109/WECONF48837.2020.9131546 ↗
6. Development and Study of Composite Acoustic Resonators with Al/(Al, Sc)N/Mo/Diamond Structure with a High Q Factor in the UHF Range10.1134/S1063771019030072 ↗
7. Influence of magnetron sputtering modes of aluminum and aluminum nitride films on their surface, structure and composition10.1088/1742-6596/1870/1/012023 ↗
8. Felmetsger, V.V. (2017, January 6–9). Sputter technique for deposition of AlN ScAlN and Bragg reflector thin film in mass production. Proceedings of the 2017 IEEE International Ultrasonics Symposium (IUS), Washington, DC, USA.10.1109/ULTSYM.2017.8092612 ↗
9. AlN piezoelectric thin films for energy harvesting and acoustic devices10.1016/j.nanoen.2018.06.062 ↗
10. Chemical vapour deposition of polycrystalline AlN films from AlCl3–NH3 mixtures.: Analysis and modelling of transport phenomena10.1016/S0040-6090(01)01792-8 ↗
11. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition10.1016/j.tsf.2007.09.030 ↗
12. Properties of AlN layers grown on c–sapphire substrate using ammonia assisted MBE10.1016/j.jcrysgro.2018.07.023 ↗
13. Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC10.1016/j.jallcom.2020.157487 ↗
14. Structural characterization of AlN thin films grown on sapphire by atomic layer deposition10.1016/j.tsf.2023.139826 ↗
15. X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations10.1016/j.tsf.2017.07.006 ↗
16. Corrosion resistance of AlN monolayer and Al/AlN multilayer deposited by filtered cathodic vacuum arc10.1016/j.tsf.2023.139762 ↗
17. Multi-stage pulsed laser deposition of aluminum nitride at different temperatures10.1016/j.apsusc.2015.10.093 ↗
18. Optical characterization of sputtered aluminum nitride thin films—Correlating refractive index with degree of c-axis orientation10.1016/j.tsf.2019.137701 ↗
19. Solid particle erosion of aluminium nitride thin film deposited by radio frequency magnetron sputtering technique on AA606110.1016/j.matpr.2021.04.134 ↗
20. Iqbal, A., and Faisal, M.Y. (2018). Reactive Sputtering of Aluminum Nitride (002) Thin Films for Piezoelectric Applications: A Review. Sensors, 18.10.3390/s18061797 ↗
21. Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications10.1016/j.pmatsci.2017.04.006 ↗
22. Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering10.1063/1.1359162 ↗
23. Physics and technology of magnetron sputtering discharges10.1088/1361-6595/abb7bd ↗
24. Characterization of pulsed DC magnetron sputtering plasmas10.1088/1367-2630/7/1/090 ↗
25. AlN thin films deposited by DC reactive magnetron sputtering: Effect of oxygen on film growth10.1051/epjap/2013130445 ↗
26. Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films10.1016/j.diamond.2003.10.063 ↗
27. Influence of oxygen concentration in sputtering gas on piezoelectric response of aluminum nitride thin films10.1063/1.2957654 ↗
28. The influence of deposition rate on the stress and microstructure of AlN films deposited from a filtered cathodic vacuum arc10.1016/j.tsf.2011.01.273 ↗
29. Low temperature growth of rf reactively planar magnetron–sputtered AlN films10.1016/0040-6090(94)06450-4 ↗
30. On the nature of the oxygen–related defect in aluminum nitride10.1557/JMR.1990.1763 ↗
31. Structural properties of AlN films with oxygen content deposited by reactive magnetron sputtering: XRD and XPS characterization10.1142/S0218625X1101445X ↗
32. Fang, L., Jiang, Y., Zhu, S., Ding, J., Zhang, D., Yin, A., and Chen, P. (2018). Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In–Situ Luminescence Sensing of Al/AlN Multilayer Coating Health. Materials, 11.10.3390/ma11112196 ↗
33. Well-defined (0001)-oriented aluminum nitride polycrystalline films on amorphous glass substrates deposited by ion plating with direct-current arc discharge10.1016/j.apsusc.2019.02.027 ↗
34. Study of optical and structural properties of sputtered aluminum nitride films with controlled oxygen content to fabricate Distributed Bragg Reflectors for ultraviolet A10.1016/j.optmat.2019.109405 ↗
35. Joint functioning of a magnetron sputtering system and an end-hall ion source10.1134/S1063784214090096 ↗
36. Evolution of sputtering target surface composition in reactive high power impulse magnetron sputtering10.1063/1.4977814 ↗
37. Search for an Initial Approximation in Solving Inverse Problems in Ellipsometry and Spectrophotometry10.1364/JOT.78.000350 ↗
38. Okunev, A.G., Mashukov, M.Y., Nartova, A.V., and Matveev, A.V. (2020). Nanoparticle Recognition on Scanning Probe Microscopy Images Using Computer Vision and Deep Learning. Nanomaterials, 10.10.3390/nano10071285 ↗
39. Argon entrapment in metal films by de triode sputtering10.1063/1.321776 ↗
40. CASINO V2.42—A Fast and Easy–to–use Modeling Tool for Scanning Electron Microscopy and Microanalysis User10.1002/sca.20000 ↗
41. Vibrational properties of AlN grown on (111)–oriented silicon10.1103/PhysRevB.63.125313 ↗
42. Infrared and Raman spectroscopic investigation of thin films of AlN and SiC on Si substrates10.1016/S0924-2031(98)00076-9 ↗
43. Influence of crystal properties on the absorption IR spectra of polycrystalline AlN thin films10.1016/S0925-9635(02)00228-5 ↗
44. Infrared spectrum of interstitial oxygen in silicon10.1063/1.94816 ↗
45. XPS analysis of AlN thin films deposited by plasma enhanced atomic layer deposition10.1016/j.apsusc.2014.07.105 ↗
46. Optical and structural properties of aluminium nitride thin-films synthesized by DC-magnetron sputtering technique at different sputtering pressures10.1007/s00542-020-05081-4 ↗
47. Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD10.1016/j.surfin.2022.102589 ↗
48. Riah, B., Camus, J., Ayad, A., Rammal, M., Zernadji, R., Rouag, N., and Djouadi, M.A. (2021). Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer. Coatings, 11.10.3390/coatings11091063 ↗