Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration
Source abstract
Abstract
In this paper, we successfully synthesized homoepitaxial diamond with high quality and atomically flat surface by microwave plasma chemical vapor deposition. The sample presents a growth rate of 3 μm/h, the lowest RMS of 0.573 nm, and the narrowest XRD FWHM of 31.32 arcsec. An effect analysis was also applied to discuss the influence of methane concentration on the diamond substrates.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
Institute of Wide Band Gap Semiconductors, Xi’an Jiaotong University, Xi’an 710049, China
Inner Mongolia Key Laboratory of Thin Film and Coatings, Hohhot 010051, China
Funding
National Natural Science Foundation of China · Postgraduate Research Innovation Project of Inner Mongolia Autonomous Region
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