Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass
Source abstract
Abstract
The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D–A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, China
College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123, China
School of Materials Engineering, Changshu Institute of Technology, Changshu 215500, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Jiangsu Province · Natural Science Foundation of the Jiangsu Higher Education Institutions of China · Six Talent Peaks Project of Jiangsu Province, China · Jiangsu Key Disciplines of the Thirteenth Five-Year Plan · Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices
References (44)
Show source-provided references
1. Organic crystalline materials in flexible electronics10.1039/C8CS00406D ↗
2. Recent advances in organic-based materials for resistive memory applications10.1002/inf2.12120 ↗
3. Linearly Fused Azaacenes: Novel approaches and new applications beyond field-effect transistors (FETs)10.1021/acsami.5b00113 ↗
4. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics10.1038/nmat5009 ↗
5. Solvent accommodation: Functionalities can be tailored through co-crystallization based on 1:1 coronene-F4TCNQ charge-transfer complex10.1021/acsami.6b15027 ↗
6. Flexible pyrene/phenanthro [9, 10-d]imidazole-based memristive devices for mimicking synaptic plasticity10.1002/aisy.201900008 ↗
7. Reversible multi-electron redox chemistry of π-conjugated N-containing heteroaromatic molecule-based organic cathodes10.1038/nenergy.2017.74 ↗
8. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend10.1038/nnano.2016.87 ↗
9. Ju, S.-E., Yoon, C.-G., and Kim, J. (2020). Hybrid electroluminescence devices with solution-processed mixed emitting layers of red quantum dots and blue small molecules. Coatings, 10.10.3390/coatings10070645 ↗
10. Shin, D., and Choi, S.-H. (2018). Recent studies of semitransparent solar cells. Coatings, 8.10.3390/coatings8100329 ↗
11. A robust nonvolatile resistive memory device based on a freestanding ultrathin 2D imine polymer film10.1002/adma.201902264 ↗
12. Highly robust organometallic small-molecule-based nonvolatile resistive memory controlled by a redox-gated switching mechanism10.1021/acsami.9b13401 ↗
13. Mechanisms for enhanced state retention and stability in redox-gated organic neuromorphic devices10.1002/aelm.201800686 ↗
14. Unexpected synthesis, properties, and nonvolatile memory device application of imidazole-fused azaacenes10.1021/acs.joc.9b02156 ↗
15. Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory10.1039/C9SC04213J ↗
16. Nonvolatile flexible memory based on a planar zigzag-type nitrogen-doped picene10.1002/aisy.202000155 ↗
17. Synthesis, characterization and charge storage properties of π-biindolo[2,3-b]quinoxaline for solution-processing organic transistor memory10.1016/j.dyepig.2018.07.011 ↗
18. Controlled deposition of large-area and highly-ordered thin films: Effect of dip-coating-induced morphological evolution on resistive memory performance10.1039/C9TC00431A ↗
19. Biodegradable natural pectin-based flexible multilevel resistive switching memory for transient electronics10.1002/smll.201803970 ↗
20. Redox gated polymer memristive processing memory unit10.1038/s41467-019-08642-y ↗
21. Thiadizoloquinoxaline-based N-heteroacenes as active elements for high-density data-storage devic10.1021/acsami.8b05178 ↗
22. Switching of resistive memory behavior from binary to ternary logic via alteration of substituent positioning on the subphthalocyanine core10.1021/jacs.7b00895 ↗
23. Intrinsically stretchable resistive switching memory enabled by combining a liquid metal-based soft electrode and a metal-organic framework insulator10.1002/aelm.201800655 ↗
24. Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(ii) bis-terpyridine complex10.1039/C7CC05806C ↗
25. Inorganic–organic hybrid polymer with multiple redox for high-density data storage10.1039/C4SC00823E ↗
26. Fabrication of one-dimensional organic nanofiber networks via electrophoretic deposition for a nonvolatile memory device10.1021/acsami.0c09763 ↗
27. Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements10.1039/C5TC02080H ↗
28. A multilevel memory based on proton-doped polyazomethine with an excellent uniformity in resistive switching10.1021/ja307933t ↗
29. 9,10-Imide-pyrene-fused pyrazaacenes (IPPA) as n-type doping materials for high-performance nonvolatile organic field effect transistor memory devices10.1002/aelm.201800598 ↗
30. Deriving highly oriented organic nanofibers and ternary memory performance via salification-induced effects10.1039/C8CC04112A ↗
31. Organic and hybrid resistive switching materials and devices10.1039/C8CS00614H ↗
32. Recent advances of flexible data storage devices based on organic nanoscaled materials10.1002/smll.201703126 ↗
33. Strong electron-deficient polymers lead to high electron mobility in air and their morphology-dependent transport behaviors10.1002/adma.201600541 ↗
34. Design of high-mobility diketopyrrolopyrrole-based π-conjugated copolymers for organic thin-film transistors10.1002/adma.201500401 ↗
35. Rational design of small molecules to implement organic quaternary memory devices10.1002/adfm.201503493 ↗
36. Switching charge-transfer characteristics from p-type to n-type through molecular “doping” (co-crystallization)10.1039/C5SC04954G ↗
37. A highly planar fluorinated benzothiadiazole-based conjugated polymer for high-performance organic thin-film transistors10.1002/adma.201500233 ↗
38. Low-bandgap small molecules as non-fullerene electron acceptors composed of benzothiadiazole and diketopyrrolopyrrole for all organic solar cells10.1021/acs.chemmater.5b02480 ↗
39. High-performance, air-stable field-effect transistors based on heteroatom-substituted naphthalenediimide-benzothiadiazole copolymers exhibiting ultrahigh electron mobility up to 8.5 cm2 V−1 s−110.1002/adma.201602410 ↗
40. Controlling crystallite orientation of diketopyrrolopyrrole-based small molecules in thin films for highly reproducible multilevel memory device: Role of furan substitution10.1002/adfm.201501271 ↗
41. Donor-acceptor poly(3-hexylthiophene)-block-pendent poly(isoindigo) with dual roles of charge transporting and storage layer for high-performance transistor-type memory applications10.1002/adfm.201504957 ↗
42. Controllable and versatile electrophoretic deposition technology for monolithic organic memory devices10.1021/acsami.0c02190 ↗
43. Boron(III)-containing donor-acceptor compound with goldlike reflective behavior for organic resistive memory devices10.1002/anie.201510946 ↗
44. Comparison of two strategies to improve organic ternary memory performance: 3-Hexylthiophene linkage and fluorine substitution10.1016/j.dyepig.2016.03.040 ↗