Annealing Effect on Seebeck Coefficient of SiGe Thin Films Deposited on Quartz Substrate
Source abstract
Abstract
Over the past few years, thermoelectrics have gained interest with regard to thermoelectricity interconversion. The improvement in the efficiency of the thermoelectric material at an ambient temperature is the main problem of research. In this work, silicon–germanium (SiGe) thin films, owing to superior properties such as nontoxicity, high stability, and their integrability with silicon technologies, were studied for thermoelectric applications. P-type SiGe thin films were deposited on quartz substrates by DC/RF magnetron sputtering and annealed at three different temperatures for 1 hour. Significant enhancement in the Seebeck coefficient was achieved for the sample annealed at 670 °C. A high power factor of 4.1 μWcm−1K−2 was obtained at room temperature.
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Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Thermal Radiation and Cooling Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physics, The Islamia University of Bahawalpur, Bahawalpur 63100, Pakistan
Center of Excellence for Solid State Physics, University of Punjab, Lahore 54590, Pakistan
Department of Physics, Government College University Faisalabad, Faisalabad 38000, Pakistan
Department of Physics, Centre for Material Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway
Director ORIC, National Skills University Islamabad, Islamabad 44000, Pakistan
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