Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA
Source abstract
Abstract
In this paper, a new precursor La(thd)3-DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N′-dimethylethylenediamine) was synthesized and characterized with 1H-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)3-DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)3-DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La2O3 films on a SiO2 surface with La(thd)3-DMEA and O3 as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La2O3 films, which possessed a constant growth rate of ~0.4 Å/cycle at 250–280 °C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)3-DMEA is a suitable precursor for the atomic layer deposition of La2O3 film.
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Research context
OpenAlex topics: Semiconductor materials and devices · Electronic and Structural Properties of Oxides · Catalytic Processes in Materials Science
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International Joint Research Center for Photoresponsive Molecules and Materials, School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
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