The Effect of Opto-Electronic Transition Type on the Electric Resistivity of Cr-Doped Co3O4 Thin Films
Source abstract
Abstract
Cr-doped Co3O4 thin films were prepared by spray pyrolysis on soda-lima glass. The structure and morphology of the prepared samples were characterized by grazing incidence X-ray diffraction (GIXRD), Fourier-transform infrared spectroscopy (FTIR) and Scanning electron Microscopy (SEM). The results indicated the formation of a single cubic spinel phase with a crystallite size of about 6 nm. Different electronic transitions and estimations of the band gap structure were determined from the optical absorption spectra. The dependence of electrical resistivity on Cr content was investigated. It was found that the resistivity increased by increasing the Cr content. In addition, the effect of photon excitation on the electrical properties showed that the electrical resistivity decreased under visible illumination (λvis. = 532 nm) and increased under infrared illumination (λIR = 780 nm). The relative change in resistivity (sensitivity) under both light illuminations was enhanced by increasing the Cr content. Therefore, this work introduces a new application for Co3O4 material as a light detector.
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Research context
OpenAlex topics: Magnetic Properties and Synthesis of Ferrites · ZnO doping and properties · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, Faculty of Science, Ain Shams University, Abbassia, Cairo 11566, Egypt
Department of Industrial Engineering, Università Degli Studi di Padova, 35131 Padova, Italy
Refractories, Ceramics and Building Materials Department, National Research Centre, Cairo 12622, Egypt
Physics Department, College of Applied Sciences, Umm Al-Qura University, Mecca 24382, Saudi Arabia
Funding
Umm Al-Qura University
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