Effect of Ion Energy on the Microstructure and Properties of Titanium Nitride Thin Films Deposited by High Power Pulsed Magnetron Sputtering
Source abstract
Abstract
Titanium nitride (Ti-N) thin films are electrically and thermally conductive and have high hardness and corrosion resistance. Dense and defect-free Ti-N thin films have been widely used in the surface modification of cutting tools, wear resistance components, medical implantation devices, and microelectronics. In this study, Ti-N thin films were deposited by high power pulsed magnetron sputtering (HPPMS) and their plasma characteristics were analyzed. The ion energy of Ti species was varied by adjusting the substrate bias voltage, and its effect on the microstructure, residual stress, and adhesion of the thin films were studied. The results show that after the introduction of nitrogen gas, a Ti-N compound layer was formed on the surface of the Ti target, which resulted in an increase in the Ti target discharge peak power. In addition, the total flux of the Ti species decreased, and the ratio of the Ti ions increased. The Ti-N thin film deposited by HPPMS was dense and defect-free. When the energy of the Ti ions was increased, the grain size and surface roughness of the Ti-N film decreased, the residual stress increased, and the adhesion strength of the Ti-N thin film decreased.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Diamond and Carbon-based Materials Research · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Physics and Engineering, Chengdu Normal University, Chengdu 611130, China
Key Laboratory of Advanced Technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
School of Materials Science and Engineering, Hainan University, Haikou 570228, China
Funding
National Natural Science Foundation of China · Sichuan Province Science and Technology Support Program
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