Chemical Bath Deposited Orthorhombic SnS Films for Solar Cell Applications
Source abstract
Abstract
Tin sulfide (SnS) thin films were deposited by the chemical bath deposition technique. The used procedure allows us to obtain orthorhombic SnS in 3.5 h and achieve thicknesses of 390 nm. We study the influence of deposition times, percentage of Sn precursor, and post-annealing on the structural and optical properties. The X-ray diffraction measurements of SnS films prepared at a deposition time of 3 h showed orthorhombic structure with characteristic peaks of SnS2. However, increasing the deposition time and the Sn precursor, the orthorhombic SnS phase in these samples becomes predominant. Thin-film morphologies and thicknesses were identified by scanning electron microscopy (SEM). An increase in bandgap from 1.41 eV to 1.56 eV was observed by increasing Sn precursor. The optical properties remain constant after air annealing of 285 °C. Low-temperature photoluminescence spectra show emission bands at 2.5 eV attributed to the presence of SO2. Other deep level transitions were observed at about 0.9 eV, probably due to oxygen.
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Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science Laboratory, Faculty of Engineering, Autonomous University of Yucatan, Merida 97130, Mexico
Applied Physics Department, Cinvestav-IPN, Merida 97310, Mexico
Physics Department, Cinvestav-IPN, Mexico City 07360, Mexico
Funding
Consejo Nacional de Ciencia y Tecnología
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