Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane
Source abstract
Abstract
Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiCxNy:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiCxNy:H films deposited using TMDSN + N2 mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air.
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Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Laboratory of Functional Films and Coatings, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia
Laboratory of Extraction Processes, Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk, Russia
Laser Plasma Department, Institute of Laser Physics, SB RAS, 630090 Novosibirsk, Russia
Funding
Russian Foundation for Basic Research · Ministry of Science and Higher Education of the Russian Federation
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